2N3954A |
Part Number | 2N3954A |
Manufacturer | Micross |
Description | 2N3954A MONOLITHIC DUAL N-CHANNEL JFET The 2N3954A is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3954A family are matched JFET pairs for differential amplifiers. The 2N3954A family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N. |
Features |
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP.
2N3954A Applications:
Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total . |
Datasheet |
2N3954A Data Sheet
PDF 307.38KB |
Distributor | Stock | Price | Buy |
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2N3954A |
Part Number | 2N3954A |
Manufacturer | Siliconix |
Title | monolithic dual n-channel JFET |
Description | monolithic dual n-channel JFETs designed for • • • • Low and Medium Frequency Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Any Case-To-Lead Voltage...•.....•• " .•...•.. ±100 V Gate-Drain or Gate-Source Voltage •••••..•...••.• -50 V Gate Current. . . • . . |
Features |
0, '1
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
CharacterIStic
1 12-'
IGSS
3 BVGSS
1-
4 I-
5 IS
s T A T I
VGS(olll VGS(II
17" C VGS
IS
l"i IG
1-
10 lOSS
1-+1- gls
IE. 13
0
y
gas
1- N
14 A CISS
I-M
15 I Crss
-c
-16 Cdgo
17 NF
Gate Reverse Current
Gate ·Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Op. |
2N3954A |
Part Number | 2N3954A |
Manufacturer | National Semiconductor |
Title | N-Channel Monolithic Dual JFETs |
Description | The 2N3954 thru 2N3955/A series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifier applications requiring low noise, high common-mode rejection, and very tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage —50V Gate-to-Gate. |
Features | Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D | - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o Hanger Capaalanw Co-nmon Sourc Noise Fniuri! Deferential Gats; V DG " 10V. S I = V D s- 20V. V G S 0, G K - 10Mt> V DS = 20V, D l = 200; ; A . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3954 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
2 | 2N3954 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
3 | 2N3954 |
Siliconix |
monolithic dual n-channel JFET | |
4 | 2N3950 |
Motorola |
NPN silicon RF power transistor | |
5 | 2N3955 |
ETC |
N-Channel Dual Silicon Junction Field-Effect Transistor | |
6 | 2N3955 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
7 | 2N3955 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
8 | 2N3955 |
Siliconix |
monolithic dual n-channel JFET | |
9 | 2N3955A |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
10 | 2N3955A |
Siliconix |
monolithic dual n-channel JFET |