Busque con el número de pieza junto con el fabricante o la descripción
2N4416 |
Click to view a larger image
| Part Number | 2N4416 |
| Manufacturer | TT |
| Description | SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416/ 2N4416A • Low Noise, High Gain. • Hermetic 4 Pin TO-72 Package. • Designed For VHF/UHF Amplifiers, Oscillators And Mixers. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 2N4416 2N4416A VDS Drain – Source Voltage 30V 35V VGS Gate – Source Voltage -30V -35V VGD Ga. |
| Features | . |
| Datasheet |
 2N4416 Data Sheet
PDF 179.94KB |
| Distributor | Stock | Price | Buy |
|---|
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Motorola |
| Title | VHF/UHF AMPLIFIER JFET |
| Description | 2N4416,A CASE 20-03, STYLE 1 TO-72 (TO-206AF) JFET VHF/UHF AMPLIFIER —N-CHANNEL DEPLETION MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage 2N4416 2N4416A Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C Operating and Storage Junction Temperature. |
| Features | . |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Calogic LLC |
| Title | N-Channel JFET High Frequency Amplifier |
| Description | N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V 2N4416A . . . . . . . . . . . . . . . . . |
| Features | ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V 2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Storage Temperature Range 2N4416/2N4416A . . . . . . . . . . . |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Micross |
| Title | N-CHANNEL JFET |
| Description | 2N4416 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4416 The 2N4416 is a N-Channel high frequency JFET amplifier The 2N4416 N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-18 package is well suited for military . |
| Features | DIRECT REPLACEMENT FOR SILICONIX 2N4416 EXCEPTIONAL GAIN (400 MHz) VERY LOW NOISE FIGURE (400 MHz) VERY LOW DISTORTION HIGH AC/DC SWITCH OFF‐ISOLATION ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOL. |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Vishay |
| Title | N-Channel JFETs |
| Description | The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and i. |
| Features | D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D Wideband High Gain D Very High System Sensitivity D High Quality of Amplification D High-Speed Switching Capability D High Low-Level Signal Amplification APPLICATIONS D High-Frequency Amplifier/Mixer D Oscillator D Sample-a. |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Seme LAB |
| Title | SMALL SIGNAL N-CHANNEL J-FET |
| Description | 2N4416A 2N4416A MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 4 31 2 TO-72 (TO-206AF) PIN 1 - Case PIN 2 - Gate PIN 3 -Drain PIN 4 - Source 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) SMALL SIGNAL N–. |
| Features |
• EXCELLENT HIGH FREQUENCY GAINS • CECC SCREENING OPTIONS • SPACE QUALITY LEVEL OPTIONS APPLICATIONS: The 2N4416 and 2N4416A are N-Channel JFETs designed to provide high-performance amplification, especially at high-frequency. ABSOLUTE MAXIMUM RATINGS VGD VGS IG PD (Tamb = 25°C unless otherwise stated) Gate – Drain Voltage Gate – Source Voltage Gate Current Power Dissipation Derate Tj Operatin. |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Central Semiconductor |
| Title | SILICON N-CHANNEL JFETS |
| Description | The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Di. |
| Features | MIN MAX - 100 - 100 5.0 15 35 2.5 6.0 4,500 7,500 - 50 - 1.0 - 4.0 - 2.0 UNITS V V V mA mW °C UNITS pA nA mA V V μS μS pF pF pF HIGH FREQUENCY CHARACTERISTICS: SYMBOL TEST CONDITIONS giss biss goss boss gfs Gps NF VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, VGS=0 VDS=15V, ID=5.0mA VDS=15V, ID=5.0mA, RG=1.0kΩ 100MHz MIN MAX - 100 - 2,500 - 75 - 1,000 -18 - 2.0 400MHz . |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | InterFET |
| Title | N-Channel JFET |
| Description | The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage. The TO-72 package is hermetically sealed and suitable for military applications.. |
| Features |
• InterFET N0026S Geometry • Low Noise: 4 nV/√Hz Typical • Low Leakage: 10pA Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Mixers • VHF Amplifiers Description The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher break. |
2N4416 |
| Part Number | 2N4416 |
| Manufacturer | Solitron Devices |
| Title | N-Channel JFET |
| Description | The -30V 2N4416 and 2N4416A are targeted for sensitive mixer and VHF amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage of -35V. The TO-72 package is hermetically sealed and suitable for military applications. TX, TXV, a. |
| Features | LOW NOISE: 4 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL DESCRIPTION The -30V 2N4416 and 2N4416A are targeted for sensitive mixer and VHF amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage of -35V. The TO-72 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N441 |
Motorola |
PNP Transistor |
|
| 2 | 2N4410 |
Motorola |
AMPLIFIER TRANSISTOR |
|
| 3 | 2N4410 |
ON Semiconductor |
Amplifier Transistor |
|
| 4 | 2N4410 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 5 | 2N4410 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 6 | 2N4416A |
Calogic LLC |
N-Channel JFET |
|
| 7 | 2N4416A |
Solitron Devices |
N-Channel JFET |
|
| 8 | 2N4416A |
InterFET |
N-Channel JFET |
|
| 9 | 2N4416A |
Micross |
N-Channel high frequency JFET |
|
| 10 | 2N4416A |
Central Semiconductor |
SILICON N-CHANNEL JFETS |
|
Desde 2024. D4U Semiconductor.
|