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2N4901 |
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| Part Number | 2N4901 |
| Manufacturer | Motorola |
| Description | 2N490 1(SILICON) 2N4902 2N4903 CASE 11 (TO·3) PNP power transistors for use in power amplifier and switching circuits. Complement to NPN 2N5067, 2N5068, 2N5069. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation TC =25' C Derate above 25'C Operati. |
| Features | . |
| Datasheet |
 2N4901 Data Sheet
PDF 336.57KB |
| Distributor | Stock | Price | Buy |
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2N4901 |
| Part Number | 2N4901 |
| Manufacturer | Central Semiconductor |
| Title | Silicon power Transistor |
| Description | Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com . |
| Features | . |
2N4901 |
| Part Number | 2N4901 |
| Manufacturer | Inchange Semiconductor |
| Title | (2N4901 - 2N4903) Silicon PNP Power Transistors |
| Description | ¡¤With TO-3 package ¡¤Complement to type 2N5067/5068/5069 ¡¤Low collector saturation voltage APPLICATIONS ¡¤For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=¡æ . |
| Features | f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Coll. |
2N4901 |
| Part Number | 2N4901 |
| Manufacturer | Seme LAB |
| Title | Bipolar PNP Device |
| Description | 2N4901 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma. |
| Features | age dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 31-Jul-02 Datasheet pdf - h. |
2N4901 |
| Part Number | 2N4901 |
| Manufacturer | Comset Semiconductor |
| Title | (2N4901 - 2N4903) PNP Silicon Transistors |
| Description | 2N4901 – 2N4902 – 2N4903 PNP SILICON TRANSISTORS, EPITAXIAL BASE The 2N4901, 2N4902, 2N4903 are mounted in Jedec TO-66 metal case. They are intended for general–purpose switching and power amplifier applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector to Base V. |
| Features |
.3
Unit
°C/W °C/W
13
17/10/2012
Datasheet pdf - http://www.DataSheet4U.co.kr/
2N4901 – 2N4902 – 2N4903 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Collector-Emitter Breakdown Voltage) Collector-Base cut-off Current Test Condition(s) IC=200 mAdc, IB=0 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 Min -40 -60 -80 - Typ - Max 0.1 0.1 0.1 -0.1 -2.0 -0.1 -2.0. |
2N4901 |
| Part Number | 2N4901 |
| Manufacturer | Solitron Devices |
| Title | N-Channel JFET |
| Description | The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening . |
| Features | LOW NOISE: 1.2 NV/√HZ TYPICAL FAST SWITCHING Gate 3 DESCRIPTION The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - Consult Factory. Dra. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N490 |
Digitron |
SILICON UNIJUNCTION TRANSISTORS |
|
| 2 | 2N4900 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 3 | 2N4900 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 4 | 2N4900 |
Motorola |
Medium-power PNP silicon transistors |
|
| 5 | 2N4900X |
Seme LAB |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
|
| 6 | 2N4902 |
Solitron Devices |
N-Channel JFET |
|
| 7 | 2N4902 |
Motorola |
PNP power transistors |
|
| 8 | 2N4902 |
Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors |
|
| 9 | 2N4902 |
Central Semiconductor |
Silicon power Transistor |
|
| 10 | 2N4902 |
Seme LAB |
Bipolar PNP Device |
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Desde 2024. D4U Semiconductor.
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