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2N4902 |
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| Part Number | 2N4902 |
| Manufacturer | Inchange Semiconductor |
| Description | ¡¤With TO-3 package ¡¤Complement to type 2N5067/5068/5069 ¡¤Low collector saturation voltage APPLICATIONS ¡¤For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=¡æ ) SYMBOL PARAMETER www.DataSheet.net/ CONDITIONS 2N4901 VA. |
| Features | f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-1A; IB=-0.1A IC=-5A ;IB=-1A IC=-1A ; VCE=-2V . |
| Datasheet |
 2N4902 Data Sheet
PDF 95.64KB |
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2N4902 |
| Part Number | 2N4902 |
| Manufacturer | Seme LAB |
| Title | Bipolar PNP Device |
| Description | 2N4902 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 . |
| Features | . |
2N4902 |
| Part Number | 2N4902 |
| Manufacturer | Solitron Devices |
| Title | N-Channel JFET |
| Description | The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening . |
| Features | LOW NOISE: 1.2 NV/√HZ TYPICAL FAST SWITCHING Gate 3 DESCRIPTION The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - Consult Factory. Dra. |
2N4902 |
| Part Number | 2N4902 |
| Manufacturer | Motorola |
| Title | PNP power transistors |
| Description | 2N490 1(SILICON) 2N4902 2N4903 CASE 11 (TO·3) PNP power transistors for use in power amplifier and switching circuits. Complement to NPN 2N5067, 2N5068, 2N5069. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current . |
| Features | . |
2N4902 |
| Part Number | 2N4902 |
| Manufacturer | Central Semiconductor |
| Title | Silicon power Transistor |
| Description | Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N490 |
Digitron |
SILICON UNIJUNCTION TRANSISTORS |
|
| 2 | 2N4900 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 3 | 2N4900 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 4 | 2N4900 |
Motorola |
Medium-power PNP silicon transistors |
|
| 5 | 2N4900X |
Seme LAB |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
|
| 6 | 2N4901 |
Solitron Devices |
N-Channel JFET |
|
| 7 | 2N4901 |
Motorola |
PNP power transistors |
|
| 8 | 2N4901 |
Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors |
|
| 9 | 2N4901 |
Seme LAB |
Bipolar PNP Device |
|
| 10 | 2N4901 |
Comset Semiconductor |
(2N4901 - 2N4903) PNP Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
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