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2N5196 |
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| Part Number | 2N5196 |
| Manufacturer | TEMIC |
| Description | The 2N5196/5197/5198/5199 JFET duals are designed for highĆperformance differential amplification for a wide range of precision test instrumenta. |
| Features | D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 5 pA D Low Noise D High CMRR: 100 dB Benefits Applications D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D HighĆSpeed,TempĆCompensated, SingleĆEnded Input Amps D High Speed Comparators D Impedance Converters Description The 2N5196/5197/5198/5199 JFET duals are designed for highĆperformance. |
| Datasheet |
 2N5196 Data Sheet
PDF 141.29KB |
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2N5196 |
| Part Number | 2N5196 |
| Manufacturer | Vishay Siliconix |
| Title | Monolithic N-Channel JFET |
| Description | The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The h. |
| Features | D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal APPLICATIONS D Wideband Differ. |
2N5196 |
| Part Number | 2N5196 |
| Manufacturer | InterFET |
| Title | N-Channel Dual Silicon Junction Field-Effect Transistor |
| Description | 8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (pul. |
| Features | . |
2N5196 |
| Part Number | 2N5196 |
| Manufacturer | National Semiconductor |
| Title | N-Channel Monolithic Dual JFETs |
| Description | The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/ = 85°C (Derate 2.. |
| Features | V DG - 20V, Dl - 200 jiA iDSS 9fs gfs gos gos C, ss C rss NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverss Transfer Capacitance V DS = 20V, V G S = 0, (Note 1) V D S' 20V, Vgs = 0, (Mote 1) V DG = 20V, Dl - 200 u.A, (Not. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5190 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR |
|
| 2 | 2N5190 |
ON Semiconductor |
Silicon NPN Power Transistors |
|
| 3 | 2N5190 |
SavantIC |
(2N5190 - 2N5192) Silicon NPN Power Transistors |
|
| 4 | 2N5190G |
ON Semiconductor |
Silicon NPN Power Transistors |
|
| 5 | 2N5190R |
Central Semiconductor |
NPN SILICON POWER TRANSISTOR |
|
| 6 | 2N5191 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 7 | 2N5191 |
STMicroelectronics |
NPN power transistors |
|
| 8 | 2N5191 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR |
|
| 9 | 2N5191 |
SavantIC |
(2N5190 - 2N5192) Silicon NPN Power Transistors |
|
| 10 | 2N5191G |
ON Semiconductor |
Silicon NPN Power Transistors |
|
Desde 2024. D4U Semiconductor.
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