2N5359 |
Part Number | 2N5359 |
Manufacturer | ETC |
Description | 2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Devic. |
Features | . |
Datasheet |
2N5359 Data Sheet
PDF 377.32KB |
Distributor | Stock | Price | Buy |
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2N5359 |
Part Number | 2N5359 |
Manufacturer | National Semiconductor |
Title | N-Channel JFETs |
Description | The 2N5358 thru 2N5360 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring tightly specified IdSS ranges. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation (25°C Free-Air Temperature) Power Derating (. |
Features | f) Gate-Source Cutoff Voltage bvgss Gate-Source Breakdown Voltage 'dss vGs 9fs Saturation Drain Current Gate-Source Voltage Common-Source Forward Transconductance IVfsl Common-Source Forward Transadmittance Common-Source Output 9oss Conductance Crss Common-Source Reverse Transfer Capacitance Common-Source Input Cjss Capacitance VDS = 0, V GS =-20V T= 150°C Vds= 15V, Id = 100 nA VDS- 0. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N5354 |
ETC |
PNP Silicon Transistor | |
2 | 2N5355 |
New Jersey Semi-Conductor |
PNP Transistor | |
3 | 2N5355 |
ETC |
PNP Silicon Transistor | |
4 | 2N5356 |
New Jersey Semi-Conductor |
PNP Transistor | |
5 | 2N5356 |
ETC |
PNP Silicon Transistor | |
6 | 2N5358 |
National Semiconductor |
N-Channel JFETs | |
7 | 2N5358 |
ETC |
Silicon N-channel junction field-effect transistors | |
8 | 2N5301 |
ON Semiconductor |
POWER TRANSISTORS | |
9 | 2N5301 |
Seme LAB |
Bipolar NPN Device | |
10 | 2N5301 |
Inchange Semiconductor |
Silicon NPN Power Transistors |