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| Part Number | 2SD1006 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1006 |
| Manufacturer | Kexin |
| Title | NPN Silicon Epitaxial Transistor |
| Description | SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dis. |
| Features | High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating 100 100 5 0.7 1.2 2 150 -55 to +150 Unit V V V . |
| Part Number | 2SD1006 |
| Manufacturer | AiT Semiconductor |
| Title | NPN SILICONEPITAXIAL TRANSISTORS |
| Description | The 2SD1006 is available in SOT89-3 package MACHANICAL DATA Case: SOT89-3 High collector to emitter voltage: VCEO>100V Audio Frequency Power Amplifier Application Complement to PNP type 2SB805 ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number 2SD1006-HM SOT89-3 2SD1006-H. |
| Features | C 0.7 A Collector Current(pulse)* IC(pu) 1.2 A Collector I Power Dissipation** PC 2 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not impli. |
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| 2 | 2SD1000 |
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| 5 | 2SD1005 |
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| 8 | 2SD1005 |
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| 9 | 2SD1005 |
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| 10 | 2SD1005-U |
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Desde 2024. D4U Semiconductor.
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