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A5M20TG042 |
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| Part Number | A5M20TG042 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO sys. |
| Features |
• 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier • Advanced high performance in-package Doherty • Fully matched (50 ohm input/output, DC blocked) • Reduced memory effects for improved linearized error vector magnitude • Simultaneous dual band operation (B3 –B1/B66) 3 Typical performance Table 1. 1805 –2200 MHz — Typical LTE performance Pout = 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01% probability on CCDF. [1] Carrier center frequency Gain (dB) ACPR (dBc) PAE (%) . |
| Datasheet |
 A5M20TG042 Data Sheet
PDF 646.67KB |
| Distributor | Stock | Price | Buy |
|---|
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Desde 2024. D4U Semiconductor.
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