| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V ... |
| Features | rgy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Maximum 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 138 1.1 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5... |
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N-Channel MOSFET |
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Alpha & Omega Semiconductors |
Power Transistor |
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Alpha & Omega Semiconductors |
1.3A N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
P-Channel MOSFET |
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Alpha & Omega Semiconductors |
200V N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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