| Description | • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.25mΩ < 0.82mΩ < 6.95mΩ < 1.04mΩ Applications • DC/DC Conv... |
| Features | nergy L=0.01mH C EAS VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 30 ±20 ±12 22 85 22 85 88 340 22 G 60 19 48 50 80 13 32 36 36 24 75 9.6 30 4.1 5 2.6 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum ... |
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Alpha & Omega Semiconductors |
30V Dual Asymmetric N-Channel MOSFET |
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Alpha & Omega Semiconductors |
30V Dual Asymmetric N-Channel MOSFET |
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Alpha & Omega Semiconductors |
25V Dual Asymmetric N-Channel MOSFET |
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Alpha & Omega Semiconductors |
20V P-Channel MOSFET |
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Alpha & Omega Semiconductors |
20V N-Channel MOSFET |
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Alpha & Omega Semiconductors |
20V N-Channel MOSFET |
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Alpha & Omega Semiconductors |
P-Channel MOSFET |
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Alpha & Omega Semiconductors |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
40V N-Channel MOSFET |
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Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
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