| Description | • Trench Power MOSFET technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 60V 58A < 8.5mΩ < 11mΩ Applications • Synchronous Rectification in SMPS • ATX and Gaming Pow... |
| Features | nd Storage Temperature Range TJ, TSTG Maximum 60 ±20 58 37 125 20 16 20 60 52 21 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.9 Max 20 50 2.4 Units °C/W °C/W °C/W Rev 1.2: March 2024 www.aosmd.com ... |
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Alpha & Omega Semiconductors |
100V N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
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Alpha & Omega Semiconductors |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
P-Channel MOSFET |
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INCHANGE |
P-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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