BUK7V4R2-40H |
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Part Number | BUK7V4R2-40H |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge s. |
Features |
• LFPAK56D package with half-bridge configuration enables: • Reduced PCB layout complexity • PCB shrinkage through reduced component footprint for 3-phase motor drive • Improved system level Rth(j-amb) due to optimized package design • Lower parasitic inductance to support higher efficiency • Footprint compatibility with LFPAK56D Dual package • Advanced AEC-Q101 grade Trench 9 silicon technology: • Low power losses, high power density • Superior avalanche performance • Repetitive avalanche rated • LFPAK copper clip packaging provides high robustness and reliability • Gull wing leads support hi. |
Datasheet |
BUK7V4R2-40H Data Sheet
PDF 306.28KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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NXP |
TrenchPLUS standard level FET |
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NXP |
N-channel TrenchPLUS standard level FET |
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NXP |
TrenchPLUS standard level FET |
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NXP |
TrenchPLUS standard level FET |
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NXP |
TrenchPLUS standard level FET |
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NXP |
TrenchMOS standard level FET |
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NXP Semiconductors |
TrenchMOS standard level FET |
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NXP Semiconductors |
TrenchMOS standard level FET |
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NXP Semiconductors |
N-Channel MOSFET |
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NXP |
TrenchMOS standard level FET |
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