BUK7V4R2-40H Datasheet. existencias, precio


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BUK7V4R2-40H Dual N-channel MOSFET

BUK7V4R2-40H


BUK7V4R2-40H
BUK7V4R2-40H BUK7V4R2-40H
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Part Number BUK7V4R2-40H
Manufacturer nexperia (https://www.nexperia.com/)
Description Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge s.
Features
• LFPAK56D package with half-bridge configuration enables:
• Reduced PCB layout complexity
• PCB shrinkage through reduced component footprint for 3-phase motor drive
• Improved system level Rth(j-amb) due to optimized package design
• Lower parasitic inductance to support higher efficiency
• Footprint compatibility with LFPAK56D Dual package
• Advanced AEC-Q101 grade Trench 9 silicon technology:
• Low power losses, high power density
• Superior avalanche performance
• Repetitive avalanche rated
• LFPAK copper clip packaging provides high robustness and reliability
• Gull wing leads support hi.
Datasheet Datasheet BUK7V4R2-40H Data Sheet
PDF 306.28KB


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