| Description | This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A • Max rDS(on) = 356 mW a... |
| Features |
• Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A • Max rDS(on) = 356 mW at VGS = −6 V, ID = −1.8 A • Very Low rDS(on) Mid Voltage P−Channel Silicon Technology Optimised for Low Qg • Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% UIL Tested • This Device is Pb−Free, Halide Free and is ROHS Compliant Applications • Active Clamp Switch • Load Switch DATA SHEET w... |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ON Semiconductor |
N-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
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Fairchild Semiconductor |
MOSFET |
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ON Semiconductor |
N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
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Fairchild Semiconductor |
MOSFET |
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ON Semiconductor |
P-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
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ON Semiconductor |
N-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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