| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switchin... |
| Features |
·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Singl... |
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IXYS Corporation |
Standard Power MOSFET |
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Vishay Siliconix |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Infineon |
IR MOSFET |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
HEXFET Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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