| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer... |
| Features | 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds ... |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Infineon |
IR MOSFET |
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INCHANGE |
N-Channel MOSFET |
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IXYS Corporation |
Standard Power MOSFET |
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Vishay Siliconix |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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International Rectifier |
HEXFET Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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