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KSC2073 |
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| Part Number | KSC2073 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other c. |
| Features |
TV Vertical Deflection Output Complement to KSA940 Collector−Base Voltage : VCBO = 150 V These Devices are Pb−Free and Halide Free ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 150 V VCEO Collector−Emitter Voltage 150 V VEBO Emitter−Base Voltage 5 V IC Collector Current 1.5 A PC Collector Dissipation (TC=25C) 25 W TJ Junction Temperature 150 C TSTG Storage Temperature −55X150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these lim. |
| Datasheet |
 KSC2073 Data Sheet
PDF 222.48KB |
| Distributor | Stock | Price | Buy |
|---|
KSC2073 |
| Part Number | KSC2073 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | KSC2073 — NPN Epitaxial Silicon Transistor KSC2073 NPN Epitaxial Silicon Transistor September 2011 Features • TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA = 25°C unless otherwise not. |
| Features |
• TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Tempera. |
KSC2073 |
| Part Number | KSC2073 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type KSA940 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Vertical output applications. A. |
| Features | Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 500mA ; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V KSC2073 MIN TYP. MAX UNIT 1.0 V 10 μA 10 μA 40 140 50 pF 4 MHz Notice： ISC reserves the rights . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSC2073TU |
INCHANGE |
NPN Transistor |
|
| 2 | KSC2001 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC2001 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC2002 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | KSC2003 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 6 | KSC221 |
ITT Industries |
(KSC Series) Tact Switch |
|
| 7 | KSC221J |
ITT Industries |
(KSC Series) Sealed Tact Switch |
|
| 8 | KSC2223 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 9 | KSC2223 |
Fairchild Semiconductor |
High Frequency Amplifier |
|
| 10 | KSC2223 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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Desde 2024. D4U Semiconductor.
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