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NGW40T65M3DFP |
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| Part Number | NGW40T65M3DFP |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs. This hard-switching 650 V, 40 A IGBT is optimized for high. |
| Features |
• Collector current (IC) rated at 40 A • Low conduction and switching losses • Stable and tight parameters for easy parallel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • 5 μs short circuit withstand time • RoHS compliant, lead-free plating 3. Applications • Motor drives for industrail and consumer appliances • Serve motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufactuing, etc. • Power inverters • Uninterruptible Power Supply (UPS) inverter • Photovoltaic (PV) strings • EV char. |
| Datasheet |
 NGW40T65M3DFP Data Sheet
PDF 258.70KB |
| Distributor | Stock | Price | Buy |
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nexperia |
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Desde 2024. D4U Semiconductor.
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