NGW50T65H3DFP |
|
Part Number | NGW50T65H3DFP |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power invert. |
Features |
• Collector current (IC) rated at 50 A • Low conduction and switching losses • Stable and tight parameters for easy parellel operation • Maximum junction temperature of 175 °C • Fully rated as a soft fast reverse recovery diode • RoHS compliant, lead-free plating 3. Applications • Power inverters • Uninterruptible Power Supply (UPS) inverter • Photovoltaic (PV) strings • EV charging • Induction heating • Welding 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCE collector-emitter voltage Tj operating junction temperature Conditions Tj = 25 °C Min Max Unit -. |
Datasheet |
NGW50T65H3DFP Data Sheet
PDF 362.61KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
nexperia |
40A trench field-stop IGBT |
|
|
|
nexperia |
75A high speed trench field-stop IGBT |
|
|
|
PerkinElmer Optoelectronics |
NG 6901 |
|
|
|
DB Lectro |
Relay |
|
|
|
DBL |
Switching capacity |
|
|
|
PerkinElmer Optoelectronics |
NG 6901 |
|
|
|
Intel |
32-Bit CHMOS Microprocessor |
|
|
|
ETC |
CMOS 32-Bit Microprocessor |
|
|
|
Intel |
Express Chipset |
|
|
|
ETC |
DC-6000 MHZ / CASCADABLE GAAS HBT MMIC AMPLIFIER |
|
Desde 2024. D4U Semiconductor. | Contáctenos | Política de Privacidad