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NP1804MR |
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| Part Number | NP1804MR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. N-channel P-channel G1 D1 General Features N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-. |
| Features | N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested SN SP D2 G2 N-channel P-channel Marking and pin assignment SOT-23-6L (TOP VIEW) D1 SP D2 6 5 4 Application AC half-wave rectifier circuit NP1804 Package SOT-23-6L HF Pb 1 2 3 G1 SN G2 Ordering Information Part Number NP18. |
| Datasheet |
 NP1804MR Data Sheet
PDF 280.88KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP180N04TUG |
Renesas |
N-CHANNEL POWER MOS FET |
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| 2 | NP180N04TUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
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| 3 | NP180N04TUK |
Renesas |
N-Channel MOSFET |
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| 4 | NP180N055TUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP100N04NUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
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| 6 | NP100N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP100N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP100P02D6 |
natlinear |
20V P-Channel Enhancement Mode MOSFET |
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| 9 | NP100P04PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
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| 10 | NP100P04PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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