NP4886BD6 |
Part Number | NP4886BD6 |
Manufacturer | natlinear |
Description | Schematic diagram The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. General Features VDS =40V,ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V Excellent gate charge x RDS(ON) product(FOM) Ver. |
Features |
VDS =40V,ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V
Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested
Marking and pin assignment
Application
DC/DC Converter Ideal for high-frequency switching and
synchronous rectification
Package
PDFN5 *6-8L-B Note: XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4886BD6-G Storage Temperature -55°C to +150°C Package PDFN5 *6-8L-B Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ un. |
Datasheet |
NP4886BD6 Data Sheet
PDF 824.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NP4886SR |
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2 | NP4803SR |
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3 | NP4822SR |
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4 | NP48N055CLE |
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5 | NP48N055DLE |
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6 | NP48N055ELE |
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7 | NP48N055KLE |
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8 | NP48N055MLE |
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9 | NP48N055NLE |
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MOS FIELD EFFECT TRANSISTOR | |
10 | NP4008SR |
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40V N-Channel Enhancement Mode MOSFET |