Busque con el número de pieza junto con el fabricante o la descripción
NP4N65G |
Click to view a larger image
| Part Number | NP4N65G |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS =650V，ID =4A RDS(ON)(Typ.)= 2.49Ω @VGS=10V High power and current handing capability Lead free product is acquired Surface mount package 150 °C operating tempera. |
| Features | VDS =650V，ID =4A RDS(ON)(Typ.)= 2.49Ω @VGS=10V High power and current handing capability Lead free product is acquired Surface mount package 150 °C operating temperature 100% UIS tested Marking and pin assignment Application PWM applications Load switch Uninterruptible power supply Package TO-252-2L XXXXX—Wafer Information YYYYY—Quality Code Ordering Information Part Number NP4N65G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source volt. |
| Datasheet |
 NP4N65G Data Sheet
PDF 573.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET |
|
| 2 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 4 | NP40N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP40N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP40N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP40N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP40N10PDF |
Renesas |
N-channel Power MOS FET |
|
| 9 | NP40N10VDF |
Renesas |
N-channel Power MOS FET |
|
| 10 | NP40N10YDF |
Renesas |
N-channel Power MOS FET |
|
Desde 2024. D4U Semiconductor.
|