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NP4P06MR-M |
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| Part Number | NP4P06MR-M |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V High power and current handing capability Lead free product is. |
| Features | VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment Application Battery protection Load switch Package SOT-23-3L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4P06MR-M-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Cur. |
| Datasheet |
 NP4P06MR-M Data Sheet
PDF 602.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET |
|
| 2 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 4 | NP40N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP40N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP40N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP40N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP40N10PDF |
Renesas |
N-channel Power MOS FET |
|
| 9 | NP40N10VDF |
Renesas |
N-channel Power MOS FET |
|
| 10 | NP40N10YDF |
Renesas |
N-channel Power MOS FET |
|
Desde 2024. D4U Semiconductor.
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