NP6666D6 |
Part Number | NP6666D6 |
Manufacturer | natlinear |
Description | Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel: VDS =30V,ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel: V. |
Features | N-channel: VDS =30V,ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON)=19mΩ (typical) @ VGS=-4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Marking and pin assignment PDFN5×6-8L-B D1 D1 D2 D2 D2 D2 D1 D1 NP6666 XXXXX YYYYY S1 G1 S2 G2 Top View G2 S2 G1 S1 Bottom View Application Pch+Nch Complementary MOSFET for DC-FAN H-Bridge application XXXX—Wafer Information YYYY—Quality Code. |
Datasheet |
NP6666D6 Data Sheet
PDF 829.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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2 | NP6667SR |
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7 | NP6008N |
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8 | NP6020D6-Sn |
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9 | NP60N03KUG |
Renesas |
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10 | NP60N03SUG |
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