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SD11710 |
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| Part Number | SD11710 |
| Manufacturer | Solitron Devices |
| Description | 700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VALUE VDS Drain-Source Voltage VGS Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current * PD Maximum Power Dissipation Linear Derating Factor TC = 25°C TC = 100°C 700 23 to -10 140 99 350 455 3.03 * Repetitive ratin. |
| Features | ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPERATURE, TJ(MAX) = 175 °C FAST AND RELIABLE BODY DIODE SUPERIOR AVALANCHE RUGGEDNESS ROHS COMPLIANT SD11710 700V SiC N-Channel Power MOSFET - 1 VDS = 700V 2-D ID @ 25°C = 140A RDS(on) = 15mΩ 1-G 3-S ORDERING GUIDE Part Number SD11710 Description 700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VA. |
| Datasheet |
 SD11710 Data Sheet
PDF 463.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SD11704 |
Solitron Devices |
900V SiC N-Channel Power MOSFET |
|
| 2 | SD11705 |
Solitron Devices |
1200V SiC N-Channel Power MOSFET |
|
| 3 | SD11707 |
Solitron Devices |
1200V SiC N-Channel Power MOSFET |
|
| 4 | SD11740 |
Solitron Devices |
1200V SiC N-Channel Power MOSFET |
|
| 5 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
|
| 6 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
|
| 7 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers |
|
| 8 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 9 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 10 | SD1133 |
SGS-Thomson |
(SD1xxx) Transistors |
|
Desde 2024. D4U Semiconductor.
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