logo

TSCDT20065G1 650V SiC Merged PIN Schottky Diode

Description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr...
Features
● Max junction temperature 175°C
● MPS structure for high ruggedness to forward current surge events
● High-speed switching possible
● High forward surge capability
● High-frequency operation
● Positive temperature coefficient on VF
● RoHS compliant
● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 20 A VRRM 650 V IFSM 128 A TJ MAX 175 °C Package TO-220AC-2L Configuration Sin...


Distributor Stock Price Buy





Similar Product

No. Part # Manufacture Description Datasheet
1
TSCDT08065G1

Taiwan Semiconductor
650V SiC Merged PIN Schottky Diode
Datasheet
2
TSCDT12065G1

Taiwan Semiconductor
650V SiC Merged PIN Schottky Diode
Datasheet
3
TSCD1045P5Y

TAITRON
10A Schottky Barrier Rectifier
Datasheet
4
TSCD12WS

TAITRON
1.0A Low Profile Chip Schottky Rectifier
Datasheet
5
TSCD14WS

TAITRON
1.0A Low Profile Chip Schottky Rectifier
Datasheet
6
TSCD16WS

TAITRON
1.0A Low Profile Chip Schottky Rectifier
Datasheet
7
TSCD210W

TAITRON
2A Low Profile Chip Schottky Rectifier
Datasheet
8
TSCD22W

TAITRON
2A Low Profile Chip Schottky Rectifier
Datasheet
9
TSCD24W

TAITRON
2A Low Profile Chip Schottky Rectifier
Datasheet
10
TSCD26W

TAITRON
2A Low Profile Chip Schottky Rectifier
Datasheet




logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad